发明名称 Manufacturing method for semiconductor device and manufacturing device of semiconductor device
摘要 The semiconductor manufacturing method includes the step (ST.1) of preparing a semiconductor substrate with a copper or copper-containing metal film exposed on a surface, step (ST.2) of depositing on the copper or copper-containing metal film a metal film consisting essentially of any one of CoWB, CoWP, or W; step (ST.3) of introducing Si into the above-described metal film, and step (ST.4) of nitriding the metal film introduced with Si.
申请公布号 US2009017621(A1) 申请公布日期 2009.01.15
申请号 US20080217202 申请日期 2008.07.01
申请人 TOKYO ELECTRON LIMITED 发明人 SAKO TAKUJI;MAEKAWA KAORU
分类号 H01L21/768;H01L21/67 主分类号 H01L21/768
代理机构 代理人
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