发明名称 |
Semiconductor device and method for manufacturing the same |
摘要 |
A semiconductor device includes a semiconductor substrate, and a p-channel MOS transistor provided on the semiconductor substrate, the p-channel MOS transistor comprising a first gate dielectric film including Hf, a second gate dielectric film provided on the first gate dielectric film and including aluminum oxide, and a first metal silicide gate electrode provided on the second gate dielectric film.
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申请公布号 |
US2009014809(A1) |
申请公布日期 |
2009.01.15 |
申请号 |
US20070882012 |
申请日期 |
2007.07.30 |
申请人 |
SEKINE KATSUYUKI;AOYAMA TOMONORI;KOBAYASHI TAKUYA |
发明人 |
SEKINE KATSUYUKI;AOYAMA TOMONORI;KOBAYASHI TAKUYA |
分类号 |
H01L21/28;H01L27/092;H01L29/423 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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