| 摘要 |
The plasma cleaning method is provided to remove contaminant on the surface of substrate in order to form the good epitaxial growth film. The gate electrode(115) of the conductive material and the gate insulating layer(113) are formed on the silicon substrate(111). The side wall(117) of the insulating material is formed in both sides of the gate electrode. The insulating material is laminated on the silicon substrate including the gate electrode. The gate insulating layer formed between gate electrodes is removed and the surface of the silicon substrate is exposed. . .
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