SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To obtain a highly reliable semiconductor device, by so solving various problems caused by the steps of its floating gate that the degradation of its characteristics as a semiconductor memory are suppressed, in a simple and sure manner. SOLUTION: In the semiconductor device, an outermost-end side surface (end portion 23b) of a dummy floating gate 23a of a dummy cell 20a which exists on the side of an interface portion 12 is so formed as to be a slack inclined surface, and its inclined angle is so formed as to be smaller than the inclined angle of another side surface of the dummy floating gate 23a and the inclined angle of the side surface of each floating gate 23. COPYRIGHT: (C)2009,JPO&INPIT