| 摘要 |
PROBLEM TO BE SOLVED: To assure the stiffness of a thin wafer before being made into individual pieces of devices in a device manufacturing process of a semiconductor chip or the like which has a through electrode, moreover to easily and surely obtain a status in which an insulating film is formed around a crowning of a through electrode exposing at a backside in a stage of a wafer. SOLUTION: When carrying out backside grinding of a wafer 1, only a region corresponding to a device-forming region 4 in which a semiconductor chip 3 has been formed is ground and made thin, and a concave portion 11 is formed on a backside. The stiffness of the wafer 1 is assured by an annular convex part 12 around the concave portion 11. Next, etching to the concave portion 11 is performed, a metal electrode 8 is made to project from a base 11a of the concave portion 11, and a backside electrode portion 8a is formed, further an insulating film 15 is formed in the concave portion 11, then the end surface of the insulating film 15 and the backside electrode portion 8a are cut. COPYRIGHT: (C)2009,JPO&INPIT |
