发明名称 SYSTEMS AND METHODS THAT SELECTIVELY MODIFY LINER INDUCED STRESS
摘要 The present invention facilitates semiconductor fabrication by providing methods of fabrication that selectively apply strain to multiple regions of a semiconductor device. A semiconductor device having one or more regions is provided (102). A strain inducing liner is formed over the semiconductor device (104). A selection mechanism, such as a layer of photoresist or UV reflective coating is applied to the semiconductor device to select a region (106). The selected region is treated with a stress altering treatment that alters a type and/or magnitude of stress produced by the selected region (108).
申请公布号 US2009017588(A1) 申请公布日期 2009.01.15
申请号 US20080235766 申请日期 2008.09.23
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 TSUI TING Y.;PAPA RAO SATYAVOLU S.;BU HAOWEN;KRAFT ROBERT
分类号 H01L21/8238 主分类号 H01L21/8238
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