发明名称 |
SYSTEMS AND METHODS THAT SELECTIVELY MODIFY LINER INDUCED STRESS |
摘要 |
The present invention facilitates semiconductor fabrication by providing methods of fabrication that selectively apply strain to multiple regions of a semiconductor device. A semiconductor device having one or more regions is provided (102). A strain inducing liner is formed over the semiconductor device (104). A selection mechanism, such as a layer of photoresist or UV reflective coating is applied to the semiconductor device to select a region (106). The selected region is treated with a stress altering treatment that alters a type and/or magnitude of stress produced by the selected region (108).
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申请公布号 |
US2009017588(A1) |
申请公布日期 |
2009.01.15 |
申请号 |
US20080235766 |
申请日期 |
2008.09.23 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
TSUI TING Y.;PAPA RAO SATYAVOLU S.;BU HAOWEN;KRAFT ROBERT |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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