WIRING STRUCTURE FOR A SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

摘要

The wiring structure for the semiconductor device and method for forming the same are provided to prevent the barrier from being damaged in the planarization process for the contact plug formation by forming the upper part of the barrier of metal-nitride and the lower part of the barrier of metal or metal-nitride. The wiring structure(900) for the semiconductor device comprises a plurality of conductive structures and semiconductor substrate(100) including the insulating layer(200) which buries the space between conductive structures. The metal plug(410) contacts a part of the substrate through the insulating layer. The conductive line(600) is electrically connected with the metal plug.