发明名称 |
PIEZOELECTRIC THIN FILM, PIEZOELECTRIC MATERIAL, FABRICATION METHOD OF PIEZOELECTRIC THIN FILM AND PIEZOELECTRIC MATERIAL, AND PIEZOELECTRIC RESONATOR, ACTUATOR ELEMENT AND PHYSICAL SENSOR USING PIEZOELECTRIC THIN FILM |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a piezoelectric thin film, including an aluminum nitride thin film, which improves a piezoelectric response. <P>SOLUTION: A piezoelectric thin film includes an aluminum nitride thin film that contains scandium. A content ratio of scandium in the aluminum nitride thin film is 0.5 to 50 atom% on the assumption that a total amount of the number of scandium atoms and the number of aluminum atoms is 100 atom%. According to this arrangement, the piezoelectric thin film of the present invention can improve a piezoelectric response while keeping characteristics of elastic wave propagation speed, Q value, and frequency-temperature coefficient that the aluminum nitride thin film has. <P>COPYRIGHT: (C)2009,JPO&INPIT |
申请公布号 |
JP2009010926(A) |
申请公布日期 |
2009.01.15 |
申请号 |
JP20080098480 |
申请日期 |
2008.04.04 |
申请人 |
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY;DENSO CORP |
发明人 |
AKIYAMA MORIHITO;KANBARA TOSHIHIRO;UENO NAOHIRO;KANO KAZUHIKO;TESHIGAWARA AKIHIKO;TAKEUCHI YUKIHIRO;KAWAHARA NOBUAKI |
分类号 |
H03H9/17;H01L41/08;H01L41/18;H01L41/187;H01L41/316;H01L41/39;H03H3/02;H03H9/56 |
主分类号 |
H03H9/17 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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