发明名称 PIEZOELECTRIC THIN FILM, PIEZOELECTRIC MATERIAL, FABRICATION METHOD OF PIEZOELECTRIC THIN FILM AND PIEZOELECTRIC MATERIAL, AND PIEZOELECTRIC RESONATOR, ACTUATOR ELEMENT AND PHYSICAL SENSOR USING PIEZOELECTRIC THIN FILM
摘要 <P>PROBLEM TO BE SOLVED: To provide a piezoelectric thin film, including an aluminum nitride thin film, which improves a piezoelectric response. <P>SOLUTION: A piezoelectric thin film includes an aluminum nitride thin film that contains scandium. A content ratio of scandium in the aluminum nitride thin film is 0.5 to 50 atom% on the assumption that a total amount of the number of scandium atoms and the number of aluminum atoms is 100 atom%. According to this arrangement, the piezoelectric thin film of the present invention can improve a piezoelectric response while keeping characteristics of elastic wave propagation speed, Q value, and frequency-temperature coefficient that the aluminum nitride thin film has. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009010926(A) 申请公布日期 2009.01.15
申请号 JP20080098480 申请日期 2008.04.04
申请人 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY;DENSO CORP 发明人 AKIYAMA MORIHITO;KANBARA TOSHIHIRO;UENO NAOHIRO;KANO KAZUHIKO;TESHIGAWARA AKIHIKO;TAKEUCHI YUKIHIRO;KAWAHARA NOBUAKI
分类号 H03H9/17;H01L41/08;H01L41/18;H01L41/187;H01L41/316;H01L41/39;H03H3/02;H03H9/56 主分类号 H03H9/17
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