| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To raise the temperature of a wafer sufficiently with good throughput while preventing the wafer from being deformed. <P>SOLUTION: An MMT device comprising a treating container 11 where a treating chamber 14 is formed, a susceptor 21 which is installed in the treating chamber 14 to hold the wafer 1, lift pins 26 which floats the wafer 1 over the susceptor 21, a plate heater 22 which heats the wafer 1 over the suspector 21, a gas head 30 which supplies reaction gas toward the wafer 1, a cylindrical electrode 15 which excites the reaction gas, and a cylindrical magnet 19 which produces a magnetic field is provided with a lamp heater 40 which heats the wafer 1, floated by the lift pins 26, on the lift pins 26. The wafer is heated only for a short time by the plate heater and lamp heater while floated over the susceptor, and then temperature rises of a wafer top surface and a reverse surface are made uniform to eliminate unevenness of expansion of the wafer, thereby suppressing curving of the wafer. Consequently, plasma with good reproducibility can be generated and the throughput can be improved. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
