| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device fine patterning method of forming by one photolithography step the same fine pattern as that by a conventional double patterning method to attain uniformity of pattern line widths and production cost reduction. SOLUTION: The method includes the steps of forming an etching stop film 22 and a sacrifice film on an etched layer 20 in order, forming a photoresist pattern on the sacrifice film, etching the sacrifice film using the photoresist pattern as an etching barrier to form a sacrifice film pattern, forming spacers 25 on both side walls of the sacrifice film pattern, removing the sacrifice film pattern, and etching the etching stop film 22 and the etched layer 20 in order using the spacers 25 as etching barriers. COPYRIGHT: (C)2009,JPO&INPIT
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