| 摘要 |
PROBLEM TO BE SOLVED: To separately control and optimize the crystallized states of TFT and TFD semiconductor layers which are formed by crystallizing the same amorphous semiconductor film. SOLUTION: A semiconductor device is equipped with: a substrate 101; a semiconductor layer 107t which is supported on the substrate 101 and contains a channel region 114, a source region and drain region 112a; a gate electrode 109 which controls the conductivity of the channel region 114; a thin film transistor 124 which has a gate insulating film 108 provided between the semiconductor layer 107t and the gate electrode 109; and a thin film diode 125 which is supported on the substrate 101 and has a semiconductor layer 107d containing at least an n-type region 113a and a p-type region 117a. The semiconductor layer 107t of the thin film transistor 124 and the semiconductor layer 107d of the thin film diode 125 are crystalline semiconductor layers formed by crystallizing the same amorphous semiconductor film. The semiconductor layer 107d of the thin film diode 125 has a higher crystallinity than that of the channel region 114 of the semiconductor layer 107t of the thin film transistor 124. COPYRIGHT: (C)2009,JPO&INPIT
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