NOVEL SILICON PRECURSORS TO MAKE ULTRA LOW-K FILMS WITH HIGH MECHANICAL PROPERTIES BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION
摘要
A method for depositing a low dielectric constant film on a substrate is provided. The low dielectric constant film is deposited by a process comprising reacting one or more organosilicon compounds and a porogen and then post-treating the film to create pores in the film. The one or more organosilicon compounds include compounds that have the general structure Si-CX-Si or -Si-O-(CH2)n-O-Si-. Low dielectric constant films provided herein include films that include Si-CX-Si bonds both before and after the post-treatment of the films. The low dielectric constant films have good mechanical and adhesion properties, and a desirable dielectric constant.
申请公布号
WO2009009267(A1)
申请公布日期
2009.01.15
申请号
WO2008US67487
申请日期
2008.06.19
申请人
APPLIED MATERIALS, INC.;YIM, KANG, SUB;DEMOS, ALEXANDROS, T.