| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a small-sized, low-cost device for detecting semiconductor physical quantity which detects physical quantities, without having to utilize changes in strains or gap dimensions. <P>SOLUTION: A Si layer 4a comprises a frame 6, having a rectangular opening 5 connected to a principal surface of a semiconductor substrate 2 with a photosensitive adhesive 3; a center portion 8, which is supported with respect to the frame 6 in a fluctuatable manner in the x-direction through springs 7a, 7b within the opening 5; and a through-hole 9, which is formed in the vertical direction in the central portion 8. A Si layer 4c is formed into a thickness of a few μm to a few tens of μm so that the light from the top surface can pass therethrough. The principal surface of the semiconductor substrate 2 is formed with a light-receiving element 10, such as photodiode. The light-receiving element 10 is formed inside the fluctuations range of the through-hole 9 and detects the changes in the amount of light received, accompanying the fluctuations in the through-hole 9. <P>COPYRIGHT: (C)2009,JPO&INPIT |
