| 摘要 |
PROBLEM TO BE SOLVED: To provide a resistance random access memory device (RRAM) having a three-dimensional cell array configuration and enabling fast access. SOLUTION: The RRAM includes a semiconductor substrate, a three-dimensional cell array where resistance random access memory cells are stacked and arranged three-dimensionally on the semiconductor substrate, and a sense amplifier array formed on the semiconductor substrate. In the RRAM, bit lines of predetermined layers in first and second cell array blocks adjacent in the transverse direction of the three-dimensional cell array are selected in pairs and connected to a differential input end of the sense amplifier array. COPYRIGHT: (C)2009,JPO&INPIT |
