| 摘要 |
PROBLEM TO BE SOLVED: To provide a field-effect transistor where yield is high and high drain current is possible, and to provide a method for manufacturing the same. SOLUTION: The field-effect transistor having a substrate 1, a first electrode 2 provided on the substrate 1, a first insulating layer 3 provided on a surface of the electrode 2, a second insulating layer 4 provided on a surface of the layer 3, a second electrode 5 that is positioned above the electrode 2 and provided on the layer 4, a third electrode 6 that is isolated from the electrode 5 and is provided on the substrate 1 through the layer 3 or the layer 4 or directly, and an organic semiconductor layer 8 that is provided so as to contact the electrode 5 and the electrode 6 and is insulated from the electrode 2 through the layer 3 and the layer 4, wherein an upper surface of the electrode 6 is positioned lower than that of the electrode 2 and the layer 4 is thinner than the layer 3. COPYRIGHT: (C)2009,JPO&INPIT |
