| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a structure such that the occurrence of a crystal defect in a thin and long circuit region formed in an SOI substrate can be suppressed. SOLUTION: Low-voltage transistor regions 221 to 224 are separated, by multiple inner isolation layers 232, into multiple sub-regions 220. For this reason, the length of the longitudinal direction of the sub-regions 220 is reduced, even though the low-voltage transistor regions 221 to 224 are extremely thin and long, for example. This configuration can suppress the occurrence of a crystal defect in the low-voltage transistor regions in the longitudinal direction thereof, although such defect may occur due to the difference in thermal expansion or thermal contraction between a semiconductor layer 221 in the low-voltage transistor regions 221 to 224, and the element isolation layers 231. COPYRIGHT: (C)2009,JPO&INPIT
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