| 摘要 |
PROBLEM TO BE SOLVED: To provide a vertical MOSFET, wherein a drain to source capacitance and a drain to gate capacitance are reduced with any affect on either breakdown voltage or on-resistance restrained to the minimum. SOLUTION: The vertical MOSFET comprises an epitaxial layer of reverse conduction type formed on a substrate and having a comparatively lower doping level; base layers of reverse conduction type formed with an interval on the epitaxial layer; a reverse conduction layer formed on the base layers and having a comparatively higher doping level and a conduction type layer formed around the reverse conduction layer and having a comparatively higher doping level; a buried layer of conduction type formed between the base layers and buried in the epitaxial layer such that it reaches the substrate; a buried layer of conduction type buried in the epitaxial layer and formed over the buried layer formed between the base layers; gate electrodes formed with an interval on the epitaxial layer and surrounded with an insulating film; and a source electrode. COPYRIGHT: (C)2009,JPO&INPIT
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