| 摘要 |
PROBLEM TO BE SOLVED: To provide: a method for controlling reactive sputtering, by which all of each state of compound, transition and metal can seamlessly and stably controlled; and a film deposition method using reactive sputtering, by which film deposition can be stably performed at a high speed in a transition state without failure of film forming. SOLUTION: The method for controlling reactive sputtering comprises detecting the intensity of a light having a specified wavelength emitted from a plasma, that is changed according to the sputtering state, and then controlling the introduction amount of a reactive gas so that the detected intensity of the light becomes a predetermined value. In the method, the introduction amount of the reactive gas is controlled by first PID control so that the intensity of the light having the specified wavelength emitted from the plasma coincides with a target value, and the introduction amount of the reactive gas is controlled by second PID control so that the difference between the variation of the intensity of the light, expected by the first PID control, and the variation of the intensity of the light practically generated becomes small, and further, final control of the introduction amount of the reactive gas is performed by the total control output value of the obtained first PID control output value and second PID control output value. COPYRIGHT: (C)2009,JPO&INPIT
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