发明名称 |
SOLID STATE IMAGING APPARATUS AND METHOD FOR FABRICATING THE SAME |
摘要 |
A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-circuit region which is formed at part of the substrate and in which the imaging region is controlled and a signal from the imaging region is outputted; and a copper-containing interconnect layer formed above the substrate and made of a material containing copper. Furthermore, a first anti-diffusion layer and a second anti-diffusion layer are formed, as anti-diffusion layers for preventing the copper from diffusing into each photoelectric conversion section, on the photoelectric conversion section and the copper-containing interconnect layer, respectively.
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申请公布号 |
US2009014759(A1) |
申请公布日期 |
2009.01.15 |
申请号 |
US20080233080 |
申请日期 |
2008.09.18 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
MORI MITSUYOSHI;UCHIDA MIKIYA;FUJIWARA KAZUO;YAMAGUCHI TAKUMI |
分类号 |
H01L31/113;H01L21/3205;H01L21/768;H01L23/52;H01L23/532;H01L27/146 |
主分类号 |
H01L31/113 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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