| 摘要 |
A test element group for monitoring leakage current in a semiconductor device and a method of manufacturing the same are disclosed. The test element group for monitoring leakage current in a semiconductor device includes device isolation layers formed over a first conductivity type semiconductor substrate. A second conductivity type well may be formed over the first conductivity type semiconductor substrate. First conductivity type impurity regions may be formed in first active areas between the device isolation layers in the second conductivity type well. Monitoring contacts may be formed within the first active areas to monitor leakage current, using layout data such that a distance from each of the monitoring contacts to a border of each of the first active areas is set to have an allowable minimum value under a predetermined design rule. Accordingly, the test element group can monitor leakage current caused by PN junction diodes formed by junction of the impurity regions and the well in the active areas in a semiconductor device or misalignment of contacts, and can accurately monitor micro-leakage current in a semiconductor device during manufacturing.
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