SPACER LITHOGRAPHY

摘要

Ultrafine dimensions are accurately and efficiently formed in a target layer (11) using a spacer lithographic technique comprising forming a first mask pattern (10), forming a cross-linkable layer (20) over the first mask pattern (10), forming a cross-linked spacer (30,31) between the first mask pattern (20) and cross-linkable layer (20), removing the cross-linkable layer (20), cross-linked spacer (30) from the upper surface of the first mask pattern (10) and the first mask pattern (10) to form a second mask pattern comprising remaining portions of the cross-linked spacer (31), and etching using the second mask pattern (31) to form an ultrafine pattern in the underlying target layer (11). Embodiments include forming the first mask pattern (10) from a photoresist material capable of generating an acid, depositing a cross-linkable material (20) comprising a material capable of undergoing a cross-linking reaction in the presence of an acid, and removing portions of the non-cross-linked layer (20) and cross-linked spacer (30) from the upper surface of the first mask pattern (10) before removing the remaining portions of the first mask pattern (10) and remaining noncross-linked layer (20).