发明名称 Method for manufacturing doped semiconductor components involves providing semiconductor substrate and doping one side of semiconductor substrate with p- or n- doping
摘要 The method involves providing a semiconductor substrate and doping one side of the semiconductor substrate with p- or n -doping. A decal is provided, which is manufactured using a paste of organic binder and a powder such as glass powders or organically modified ceramic powders, which contains doping ions. The decal is applied on the cleaned side of the semiconductor substrate. The semiconductor substrate before endowing is roughened with the help of potassium hydroxide corrosion.
申请公布号 DE102007032285(A1) 申请公布日期 2009.01.15
申请号 DE20071032285 申请日期 2007.07.11
申请人 FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V. 发明人 WINDBRACKE, WOLFGANG;BERNT, HELMUT;NEUMANN, GEROLD;FUTSCHER, HEINZ
分类号 H01L31/18;H01L21/225 主分类号 H01L31/18
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