| 摘要 |
<p>PURPOSE: A method for manufacturing a transistor is provided to simplify process and to improve INWE(Inverse Narrow Width Effect) by using a nitride layer as a word line insulating layer. CONSTITUTION: A trench is formed by selectively etching a silicon substrate(1). The first thermal oxide layer(5), the first nitride layer(6), an oxide layer(7) and the second nitride layer(8) are sequentially formed on the resultant structure including the trench. A trench buried oxide layer(9) is then filled in the trench. The buried oxide layer, the second nitride layer and the oxide layer are sequentially etched. The thermal oxide layer(11) is formed on the exposed first nitride layer. Then, word lines are formed on the exposed substrate.</p> |
