| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce a polishing scratch caused by particles and increase a polishing speed by utilizing the chemical action of the particles in the polishing compound, and by reducing a mechanical action as much as possible in the polishing compound suitably used for a CMP technology for flattening a substrate surface in a semiconductor element manufacturing process or the like and a polishing method for carrying out polishing by using the polishing compound. <P>SOLUTION: This polishing compound contains particles and a medium in which at least a part of the particles is dispersed, wherein the particle is formed of at least one of a cerium compound and a tetravalent metal hydroxide, and density ranges from 3 to 6 g/cm<SP>3</SP>, and the average particle diameter of the secondary particle ranges from 1 to 300 nm. <P>COPYRIGHT: (C)2009,JPO&INPIT |
