METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of preventing both crystallization and silicidation in an insulating film containing hafnium. SOLUTION: This production method includes: forming a laminate film in which an insulating film 13 containing hafnium is formed above a silicon layer 11 and a polysilicon layer 14 is formed on the insulating film 13; and subjecting the laminate film to heat treatment in an atmosphere produced by mixing oxygen with nitrogen and having a total pressure substantially equal to a partial pressure of the above nitrogen. COPYRIGHT: (C)2009,JPO&INPIT