| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit capable of performing a write-in test on a semiconductor memory element during a manufacturing process. <P>SOLUTION: A semiconductor integrated circuit device includes a substrate 10 formed with a PROM 22 whose data storing state changes by irradiation of light, and a multilayer interconnection structure 70 formed on one surface of the substrate 10 whereon the PROM 22 is formed. In the multilayer interconnection structure 70, a translucent region 80 made of a translucent material is formed at a position opposite to a PROM region 20 with the PROM 22 formed therein and serves for a light guide path into the PROM 22 from outside the multilayer interconnection structure 70. Around the translucent region 80, a light shielding region 30 consisting of multiple layers of a light shielding material which are formed continuously is formed. Also formed in the multilayer interconnection structure 70 is a PAD portion 60 which is formed outside the translucent region 80 via the light shielding region 30 when seen from the translucent region 80 to manipulate the storing state of the PROM 22. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
