| 摘要 |
PROBLEM TO BE SOLVED: To disclose a technique of separating or peeling a device fabricated in a relatively low temperature (less than 600°C) process from a glass substrate and disposing or dislocating it on a flexible substrate, typically a plastic film. SOLUTION: A plasma CVD process is used to form a release layer containing a halogen element on the glass substrate. After a semiconductor element is formed on the release layer, peeling is carried out within the release layer or on an interface thereof, and the glass substrate having a large area is separated from the semiconductor element. For the separation at the interface between the glass substrate and the release layer, the release layer may have a concentration gradient of the halogen element, such that an area in the release layer near the interface includes a larger amount of halogen element than other areas. COPYRIGHT: (C)2009,JPO&INPIT
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