发明名称 |
SILICON-BASED GE/SIGE OPTICAL INTERCONNECTS |
摘要 |
SiGe quantum wells where the well material has a lowest conduction band energy minimum at k=0 (the Gamma point of the first Brillouin zone) are provided. Quantum well structures that satisfy this condition have "Kane-like" bands at and near k=0 which can provide physical effects useful for various device applications, especially optical modulators. In the Si1-xGex material system, this condition on the band structure is satisfied for x greater than about 0.7. The quantum well barrier composition may or may not have Kane-like bands. Optical modulators and/or detectors according to the invention are suitable for inclusion in waveguide-based optical interconnects. Such interconnects can be on-chip interconnects or chip to chip interconnects.
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申请公布号 |
US2009016666(A1) |
申请公布日期 |
2009.01.15 |
申请号 |
US20060524505 |
申请日期 |
2006.09.19 |
申请人 |
KUO YU-HSUAN;HARRIS JR JAMES S;MILLER DAVID A B |
发明人 |
KUO YU-HSUAN;HARRIS, JR. JAMES S.;MILLER DAVID A.B. |
分类号 |
G02F1/035 |
主分类号 |
G02F1/035 |
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