发明名称 Substrate processing apparatus and semiconductor device producing method
摘要 Disclosed is a substrate processing apparatus, including: a chamber, made of a metal, to form a processing space for processing a substrate; at least one rod-like heating body to heat the substrate; and a tube body, made of a material different from that of the chamber, to accommodate the heating body therein, wherein an outer diameter of the tube body on a processing space side in a penetrating portion where the tube body penetrates a wall of the chamber is set to be smaller than an outer diameter of the tube body on an outer side of the chamber in the penetrating portion.
申请公布号 US2009017641(A1) 申请公布日期 2009.01.15
申请号 US20060990696 申请日期 2006.11.28
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 YANAGISAWA YOSHIHIKO;TANABE MITSURO
分类号 H01L21/30;F27D11/00 主分类号 H01L21/30
代理机构 代理人
主权项
地址