A semiconductor device having switch function or rewriting property of stabilized data is provided to improve integrated ratio by performing low power consumption and low cost. A bottom electrode(103) is formed on a semiconductor substrate. A top electrode is formed on a surface of the semiconductor substrate. Solid electrolyte layers(108, 109) are formed between the top electrode and the bottom electrode. A conductive path is formed inside the solid electrolyte layers of a path connecting the top electrode and the bottom electrode. A conductive material charging region(104) is formed in an interface of the solid electrolyte layers.
