Method of manufacturing a semiconductor-on-insulator substrate for microelectronics and optoelectronics

摘要

The method involves providing a substrate (7) with a silicon support (6), and forming a mask e.g. silicon nitride pattern (9), on a portion of strained silicon thin layer (3). Epitaxy of a strained silicon germanium layer is obtained, and a strained germanium layer is obtained by high temperature oxidation. The mask and a silicon oxide layer (4) are removed, and another mask is formed to protect zones of strained germanium and silicon portions of a semi-conducting thin layer. Epitaxy on the germanium portion is obtained to form a germanium thick layer, and the latter mask is removed.