| 摘要 |
<p>A formation method of a semiconductor device is provided to prevent damage to an align key in an etching process by forming the align key while forming an element isolation film. An attack barrier is formed on a semiconductor substrate(100). The attack barrier and the semiconductor substrate are etched and a trench is formed. An insulating layer is formed on the semiconductor substrate in which the trench is formed. An element isolation film(140a), which defines the active area in the semiconductor substrate of a main chip area(A) by performing a planarization process in the insulating layer, is formed. A key open mask(key open mask) exposing a scribe line area(B) is formed on the semiconductor substrate. After the attack barrier is removed, subsequent processes, process for forming a gate, are performed on the active area of the semiconductor substrate of the main chip area.</p> |
