| 摘要 |
<p>The element has a zone (40) with a higher concentration of doping, and turned towards a main surface (H2). Concentration (C1, C2) of the doping of a buffer layer (30) on a boundary surface (G1) to a zone (20) is higher than on another boundary surface (G2) to the zone (40). The concentration of the buffer layer drops out by the boundary surface (G1) to the boundary surface (G2) in an exponential, linear or vibrant manner. The buffer layer is produced by ion implantation. An independent claim is also included for a method for manufacturing a semiconductor element.</p> |
