METHOD FOR GROWTH OF SILICON CARBIDE SINGLE CRYSTAL, SILICON CARBIDE SEED CRYSTAL, AND SILICON CARBIDE SINGLE CRYSTAL

摘要

A method for producing a single crystal includes supplying a vapor gas from silicon carbide as a raw material to a seed crystal formed of a silicon carbide single crystal to grow the seed crystal. The seed crystal is disposed in a part of crystal growth, with a crystal face of the seed crystal inclined relative to a (0001) plane or (000-1) plane, thereby making crystal growth.