REFLECTIVE PHOTOMASK BLANK, PROCESS FOR PRODUCING THE SAME, REFLECTIVE PHOTOMASK AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE

摘要

A reflection type photomask blank (10) includes: a substrate (1); a multilayer reflection film (2) formed on the substrate (1) for reflecting exposure light; a protection film (3) formed on the multilayer reflection film (2) for protecting the multilayer reflection film (2); an absorber layer (5) for absorbing the exposure light on the protection film (3); and a shock absorbing film (4) formed between the absorber layer (5) and the protection film (3), with a resistance to etching which is performed when an exposure transfer pattern of the absorber layer (5) is formed, in which the protection film (3) is: a compound including Zr and Si; a compound including Zr, Si, and at least either one of O and N; or a single element or a compound including at least any one of Ru, C, and Y