发明名称 CIRCUIT FOR OUTPUTTING INTERNAL INFORMATION OF SEMICONDUCTOR MEMORY APPARATUS
摘要 A circuit for outputting internal information of semiconductor memory apparatus is provided to allow a fault analysis due to the fuse cutting by outputting the fuse cutting data to the outside. A fuse circuit(10) comprises the first and the second fuse, and it generates the first and the second fuse cutting signal(fuse cut(1:2)) according to is the cutting state of each fuse. An internal voltage generation unit(20) distributes the reference voltage(Vref) in response to the first and the second fuse cutting signal. The internal voltage generation unit produces the internal voltage(V int) by using the standards distribution voltage. The internal voltage generation unit comprises a decoder(21), a voltage divider(22) and inner voltage generator(23). An information output unit(100) comprises a selecting unit(110) and an output driving part(120).
申请公布号 KR20090005813(A) 申请公布日期 2009.01.14
申请号 KR20070069151 申请日期 2007.07.10
申请人 HYNIX SEMICONDUCTOR INC. 发明人 WON, HYUNG SIK
分类号 G11C29/04;G11C7/10 主分类号 G11C29/04
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