Method of manufacturing plates of a semi-conductor material by directed crystallisation and moulding

摘要

A seed is disposed at the bottom of the crucible and semi-conducting material feedstock is inserted into the crucible. The feedstock is melted and the seed has face having an orientation along non-dense crystallographic planes in contact with the melt. The feedstock is subjected to directional solidification in the mold and separating the seed and the solidified semi-conducting material. Thus, the semi-conducting material wafers are manufactured by molding and directional crystallization of liquid mass of the material by device formed by several intercalary elements. A seed is disposed at the bottom of the crucible and semi-conducting material feedstock is inserted into the crucible. The feedstock is melted and the seed has face having an orientation along non-dense crystallographic planes in contact with the melt. The feedstock is subjected to directional solidification in the mold and separating the seed and the solidified semi-conducting material. Thus, the semi-conducting material wafers are manufactured by molding and directional crystallization of liquid mass of the material by device comprising crucible and mould formed by several intercalary elements spaced apart from one another. The intercalary elements contain graphite. The seed is of monocrystalline type or polycrystalline type. The semi-conducting material is silicon and/or germanium.