发明名称 |
TEMPERATURE INSENSITIVE SILICON OSCILLATOR AND PRECISION VOLTAGE REFERENCE FORMED THEREFROM |
摘要 |
<p>Micromachined, thermally insensitive silicon resonators are provided having accuracy equivalent or superior to that of quartz resonators, and are fabricated from a micromechanical, silicon-on-glass process. In one embodiment, such a resonator is realized using a tuning fork gyroscope. Radiation-hard precision voltage references (PVRs) are enabled using the silicon resonators. Thermal sensitivity is reduced relative to that of a silicon-on-silicon process oscillator, providing a thermal sensitivity comparable to that of a quartz oscillator. By employing a micromechanical device based upon a tuning fork gyroscope, resonators are made from either or both of the gyro drive and sense axes. A resonator constructed as an oscillator loop whose resonant frequency is compared to a frequency standard provides a bias voltage as a reference voltage.</p> |
申请公布号 |
EP0962052(B1) |
申请公布日期 |
2009.01.14 |
申请号 |
EP19980910052 |
申请日期 |
1998.02.24 |
申请人 |
THE CHARLES STARK DRAPER LABORATORY, INC. |
发明人 |
WEINBERG, MARC, S.;WARD, PAUL, A.;KOUREPENIS, ANTHONY, S. |
分类号 |
H03L7/00;G01C19/574;H03B5/30;H03H9/02;H03H9/24;H03L1/02;H03L7/099 |
主分类号 |
H03L7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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