| 摘要 |
A dual-bit memory device includes a first charge storage region (164A) spaced apart from a second charge storage region (164B) by an isolation region (170). Techniques for erasing a memory can be provided in which electrons can be injected into the charge storage regions (164 A, B) to erase the charge storage regions (164 A, B). Other techniques for programming a memory can be provided in which holes can be injected into at least one of the charge storage regions (164 A, B) to program the charge storage regions (164 A, B). |
