SUBSTRATE PROCESSING APPARATUS COMPRISING TUNABLE BAFFLE AND EXHAUSTION METHOD USING THE SAME

摘要

The substrate processing apparatus comprising tunable baffle and exhaustion method using the same are provided to maintain the uniform exhaust pressure by controlling the exhaust pressure by operating the baffle of the inside of chamber. The reaction space is formed the chamber(110). The substrate mounting plate(120) is installed inside the chamber. The plasma electrode(140) supplies the high frequency power to the inside of chamber. The gas distribution plate(130) is fixed to the lower part of the plasma electrode. The gas service pipe(150) supplies reactant to the top of the gas distribution plate through the central part of the plasma electrode. The radio frequency power(160) applies the high frequency power in the plasma electrode. The exhaust pipe(190) is formed in the lower part of the chamber to control the pressure and residual chemical ventilation of the inside of chamber. In the inside of the chamber, the first baffle(170) for controlling the exhaust pressure is installed at the side of the substrate pallet. The second baffle(180) is set up in the lower part of the first baffle. And the second baffle is moved by using the baffle driving part(200).