| 摘要 |
<p>A high power semiconductor device package is provided to increase matching impedance and to improve output property by using internal matching method with chip transistor die and chip capacitor. A high power semiconductor device package includes at least one or more capacitors(21, 22). A high power transistor(30) is arranged with the capacitor in a row. Input/output terminal lead wires(40, 50) are formed for input/output information of the high power transistor and the capacitor. The capacitor, the high power transistor, and the input/output terminal lead wires are electrically connected by a plurality of connection wires(111, 112, 113, 114). The capacitor and the transistor are connected by a three-dimensional range mode for a low input impedance matching of the high power transistor.</p> |
