METHOD FOR READING OF NAND FLASH MEMORY DEVICE

摘要

A method for reading of NAND flash memory device is provided to reduce the reading error by reducing the coupling and interference due to unselected cell. A read bit line voltage(V) is applied to the bit line(B/L1) of the select cell(SC), and the select cell read voltage(Vread) is applied to the word line(W/L29) of the select cell. The first read voltage(Vread1) is applied to the word line(W/L0-W/L27,W/L31) of the first nonselective cell(NSC). The second read voltage(Vread2) lower than the first read voltage is supplied to a nonselective cell(ASC1, ASC2) positioned at the both cells adjacent to the select cell. A voltage turning on string selection transistor and a ground selection transistor is supplied to the string selection line(SSL) and ground selection line(GSL). The electric signal outputted through string is compared with the reference signal, and the select cell is determined according to the comparison result.