发明名称 |
Xe preamorphising implantation |
摘要 |
<p>A SOI substrate (101) is preamorphized by ion implanting Xe 15 prior to forming source/drain extensions (21) and source/drain regions (41), thereby virtually eliminating or significantly reducing floating body effects. Other aspects comprise ion implanting a Xe2+ into a bulk silicon or SOI substrate to effect preeamorphization prior to forming source/drain extensions and regions having shallow junctions with reduced vertical and lateral straggle.
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申请公布号 |
EP1511071(A3) |
申请公布日期 |
2009.01.14 |
申请号 |
EP20040078020 |
申请日期 |
2002.04.05 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
BUYNOSKI, MATTHEW, STEPHEN;NG, CHE-HOO |
分类号 |
H01L21/20;H01L21/265;H01L21/324;H01L21/336;H01L29/78;H01L29/786 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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