| 摘要 |
<p>A manufacturing method of a photomask is provided to improve the accuracy of a pattern in a wafer exposure process as a light shielding pattern is form with an imprint process in the backside of a photomask in which a pinhole defect pattern is formed and the light is cut off even in case of forming the pinhole defect pattern in a post wafer exposure processing. A light shielding film pattern(110) is formed on a transparent substrate(100) and a binary photo mask is manufactured. A mold having an unevenness pattern corresponding to the domain in which the pinhole defect pattern is generated is made. A light shielding layer is coated in the surface of the unevenness pattern with constant thickness. After the mold in which the light-shielding layer is coated is arranged with the transparent substrate, the mold is pressurized in the backside surface of the transparent substrate and is contacted.</p> |
