| 摘要 |
<p>The sensor has a cavity between a rectangular movable gate (2) and a P type single-crystal silicon substrate (1) of an N channel MOSFET transistor, where the MOSFET transistor is realized on the substrate. A position measuring unit measures a position of the movable gate. A movable gate displacing unit is arranged between a pressure source and the movable gate for displacing the movable gate under the effect of the pressure applied on an external upper surface (8) of the gel. The displacing unit is constituted of a silicone gel (7) in mechanical contact with the movable gate. Independent claims are also included for the following: (1) a method for measuring the relief of an external upper surface of a body using a pressure microsensor (2) a method for recognizing a fingerprint using a pressure microsensor (3) a method for manufacturing a pressure microsensor.</p> |
