| 摘要 |
A memory (150) includes a first charge storage region (164A) spaced apart from a second charge storage region (164B) by an isolation region (170). Techniques for erasing a memory (150) are provided in which electrons are Fowler-Nordheim (FN) tunneled out of at least one of the charge storage regions (164 A, B) into a substrate (154) to erase the at least one charge storage region of the memory (150). Other techniques are provided for programming a single charge storage region at multiple different levels or states.
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