发明名称 |
Static random access memories including a silicon-on-insulator substrate |
摘要 |
Static random access memories (SRAMs) include a semiconductor substrate having a buried insulator in a predetermined portion of the semiconductor substrate and a silicon-on-insulator (SOI) region including a semiconductor layer on the buried insulator. A flip-flop circuit is in the SOI region and a pass transistor connected to the flip-flop circuit is on a bulk region of the semiconductor substrate. The bulk region of the semiconductor substrate is a separate region from the SOI region. The flip-flop circuit may include at least two CMOS inverters and the pass transistor may be a plurality of pass transistors.
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申请公布号 |
US7476944(B2) |
申请公布日期 |
2009.01.13 |
申请号 |
US20040893815 |
申请日期 |
2004.07.19 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JONG-WOOK |
分类号 |
H01L27/088;G11C11/412;H01L21/8244;H01L21/84;H01L27/01;H01L27/11;H01L27/12 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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