| 摘要 |
A process for finFET spacer formation generally includes depositing, in order, a conformal liner material, a conformal spacer material, and a conformal capping material onto the finFET structure; tilt implanting dopant ions into portions of the capping layer about the gate structure; selectively removing undoped capping material about the source and drain regions; selectively removing exposed portions of the spacer material; selectively removing exposed portions of the capping material; anisotropically removing a portion of the spacer material so as to expose a top surface of the gate material and isolate the spacer material to sidewalls of the gate structure; and removing the oxide liner from the fin to form the spacer on the finFET structure.
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