发明名称 |
Method for fabricating semiconductor device |
摘要 |
Disclosed is a method for fabricating a semiconductor device. The method includes: forming a first inter-layer insulation layer on a substrate provided with a plurality of cell contact plugs; selectively etching the first inter-layer insulation layer to form a plurality of first contact holes; performing a cleaning process to remove etch residues on lower portions of the first contact holes; forming insulating fences on inner walls of the first contact holes; forming a plurality of bit lines in contact with a group of the cell contact plugs through the respective first contact holes; forming a second inter-layer insulation layer over the plurality of bit lines; planarizing the second inter-layer insulation layer until an upper portion of each of the bit lines is exposed; and selectively etching the second inter-layer insulation layer in alignment with the bit lines, thereby obtaining a plurality of second contact holes.
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申请公布号 |
US7476625(B2) |
申请公布日期 |
2009.01.13 |
申请号 |
US20050241098 |
申请日期 |
2005.09.29 |
申请人 |
HYNIX SEMICONDUCTOR, INC. |
发明人 |
LEE SUNG-KWON;LEE DONG-DUK |
分类号 |
H01L21/31;H01L21/469 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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