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发明名称
Method of manufacturing semiconductor substrate having GaN layer
摘要
申请公布号
KR100878512(B1)
申请公布日期
2009.01.13
申请号
KR20070046723
申请日期
2007.05.14
申请人
发明人
分类号
H01L33/00;H01L21/20
主分类号
H01L33/00
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代理人
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